Hydrostatic Pressure and Electric-field Effects on the Shallow Donor Impurity States in GaAs-Ga0.7Al0.3As Quantum-well Wires
نویسندگان
چکیده
Using a variational procedure within the effective-mass approximation, we have made a theoretical study of the effects of hydrostatic pressure and applied electric fields on the binding energy of a shallow-donor impurity in square-transversal section GaAs-Ga0.7Al0.3As quantum-well wires. The electric field is applied in a plane of the transversal section of the wire and many angular directions are considered. The hydrostatic pressure has been considered both in the direct and indirect gap regime for the Ga0.7Al0.3As material. For the potential barrier that defines the wire region, we consider an x-dependent finite and y-dependent infinite model. The results we present are for the impurity binding energy and considering different values of the wire dimensions, hydrostatic pressure, applied electric field, and the impurity position in the transversal section of the wire.
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